Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime |
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| Authors: | He Hongyu Zheng Xueren |
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| Affiliation: | 1. Faculty of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China;School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
2. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China |
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| Abstract: | An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is developed.Moreover,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression.The ... |
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| Keywords: | amorphous In-Ga-Zn-oxide(a-IGZO) thin-film transistors(TFTs) surface potential threshold voltage trap states |
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