Binding energies of shallow impurities in asymmetric strained wurtzite Al_x Ga_(1-x)N/GaN/AIy Ga1-y N quantum wells

The ground state binding energies of hydrogenic impurities in strained wurtzite Al_xGa_(1-x)N/GaN/Al_yGa_(1-y)N quantum wells are calculated numerically by a variational method.The dependence of the binding energy on well width,impurity location and Al concentrations of the left and right barriers is discussed,including the effect of the built-in electric field induced by spontaneous and piezoelectric polarizations.The results show that the change in binding energy with well width is more sensitive to the i...