| 基于GaAs PHEMT的Ku波段宽带单片中功率放大器 |
| |
| 引用本文： | 刘如青,高学邦,崔玉兴,张斌. 基于GaAs PHEMT的Ku波段宽带单片中功率放大器[J]. 微纳电子技术, 2011, 48(4): 230-232,253. DOI: 10.3969/j.issn.1671-4776.2011.04.005 |
| |
| 作者姓名： | 刘如青 高学邦 崔玉兴 张斌 |
| |
| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
| |
| 摘 要： | 设计并实现了一款Ku波段宽带单片中功率放大器,依据电路原理设计了功率放大器电路,利用ADS软件对设计的电路和版图分别进行了电学参数优化与电磁仿真.放大器采用0.25 μm栅长的GaAs PHEMT作为有源器件,芯片衬底减薄至80μm,采用了NiCr金属膜电阻、重叠式MIM(金属-绝缘体-金属)电容器、空气桥连接和背面通...
|
| 关 键 词： | GaAs Ku波段 宽带 功率放大器 单片 |
Ku-Band Broadband Monolithic Medium Power Amplifiers Based on GaAs PHEMTs |
| |
| Liu Ruqing,Gao Xuebang,Cui Yuxing,Zhang Bin. Ku-Band Broadband Monolithic Medium Power Amplifiers Based on GaAs PHEMTs[J]. Micronanoelectronic Technology, 2011, 48(4): 230-232,253. DOI: 10.3969/j.issn.1671-4776.2011.04.005 |
| |
| Authors: | Liu Ruqing Gao Xuebang Cui Yuxing Zhang Bin |
| |
| Affiliation: | Liu Ruqing,Gao Xuebang,Cui Yuxing,Zhang Bin (The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
| |
| Abstract: | A Ku-band broadband monolithic medium power amplifier was designed and achieved.The power amplifier circuit was designed according to the circuit principle,and the electrical parameters were optimized and the electromagnetic simulation was carried out for the circuit and layout with ADS software.The 0.25 μm gate-length power PHEMT was used as the active device for the amplifier,and the chip was fabricated on a wafer with the thickness of 80 μm.The techniques of the NiCr metal film resistor,overlap MIM capacitor,air bridge connection and back-side via hole ground were used in the fabrication process.The chip was designed to fully match with the 50 Ω input and output impedance.The test results of microwave characteristics show that the operation frequency of the monolithic power amplifier is 13-18 GHz,the power gain is 19 dB,the saturation output power is 29 dBm and the power-added efficiency(PAE) is 30%. |
| |
| Keywords: | GaAs Ku-band broadband power amplifier monolithic |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
