Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode |
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Authors: | Chen Fengping Zhang Yuming Lü Hongliang Zhang Yimen Guo Hui Guo Xin |
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Affiliation: | School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China |
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Abstract: | 4H-SiC junction barrier Schottky(JBS)diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on the whole anode.The reverse performances are compared to find the influences of these factors.The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown v... |
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Keywords: | 4H-SiC junction barrier Schottky field guard ring |
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