| 影响AlGaN/GaN HFET器件二维电子气的若干因素 |
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| 引用本文： | 张明华,林兆军,李惠军,申艳芬,魏晓珂,刘岩.影响AlGaN/GaN HFET器件二维电子气的若干因素[J].微纳电子技术,2011,48(4):225-229. |
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| 作者姓名： | 张明华 林兆军 李惠军 申艳芬 魏晓珂 刘岩 |
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| 作者单位： | 1. 山东大学信息科学与工程学院,济南,250100
2. 山东大学物理微电子学院,济南,250100 |
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| 基金项目： | 国家自然科学基金资助项目(10774090) |
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| 摘 要： | 基于Sentaurus Workbench(SWB)TCAD可制造性设计平台进行AlGaN/GaN器件的结构设计和仿真,并对影响二维电子气的重要参数因素进行了研究及优化,诸如AlGaN势垒层中Al组分x、AlGaN势垒层厚度h、应变弛豫度r和栅偏压Vg等因素。参数相关性的制约结果,无疑会反映在对器件物理特性的制约及影响上。研究结果表明,在一定条件下增大势垒层中Al组分和势垒层厚度可以提高器件的电流传输特性。然而随着二者的不断增大将会引起应变弛豫的发生,而应变弛豫的发生会降低器件的性能。
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| 关 键 词： | AlGaN/GaN 异质结场效应晶体管(HFET) 二维电子气(2DEG) 自发极化 压电极化 |
Factors Affecting the Two-Dimensional Electron Gas in AlGaN/GaN HFET Devices |
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| Zhang Minghua,Lin Zhaojun,Li Huijun,Shen Yanfen,Wei Xiaoke,Liu Yan.Factors Affecting the Two-Dimensional Electron Gas in AlGaN/GaN HFET Devices[J].Micronanoelectronic Technology,2011,48(4):225-229. |
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| Authors: | Zhang Minghua Lin Zhaojun Li Huijun Shen Yanfen Wei Xiaoke Liu Yan |
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| Affiliation: | Zhang Minghuaa,Lin Zhaojunb,Li Huijuna,Shen Yanfena,Wei Xiaokea,Liu Yana (a.School of Information Science and Engineering,b.School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) |
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| Abstract: | The structure design and simulation of the AlGaN/GaN device were carried out based on the TCAD simulation platform-Sentaurus Workbench(SWB),and the influence of the crucial parameters on the two-dimensional electron gas(2DEG)was discussed and optimized.The parameters related to the structure and technology of the AlGaN/GaN device include the Al component(x)in the AlGaN barrier layer,the thickness(h) of the AlGaN barrier layer,the strain relaxation degree(r)and the gate bias voltage(Vg),etc.It is no doubt th... |
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| Keywords: | AlGaN/GaN heterostructure field effect transistor(HFET) two-dimensional electron gas(2DEG) spontaneous polarization piezoelectric polarization |
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