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Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy
Authors:GhSareminia  FZahedi  ShEminov  ArKaramian Electronic Component Industry-Optoelectronic Industry  POBox -  Tehran  Iran Institute of Physics  Azerbaijan University  Baku  Azerbaijan
Affiliation:Gh.Sareminia~(1, ),F.Zahedi~1,Sh.Eminov~2,and Ar.Karamian~3 1 Electronic Component Industry(ECI)-Optoelectronic Industry,P.O.Box 19575-199,Tehran,Iran 2 Institute of Physics,Azerbaijan University,Baku,Azerbaijan 3 Department of Mathematics,Razi University,Kermansha,Iran
Abstract:The crystal structure of InSb111]A/B surfaces shows that this structure is polarized.This means that the surfaces of InSb111]A and InSb111]B contain two different crystallized directions and they have different physical and chemical properties.Experiments were carried out on the InSb111]A/B surfaces,showing that tartaric acid etchant could create a very smooth surface on the InSb111]B without any traces of oxides and etch pit but simultaneously create etch pit on InSb111]A surfaces.After lapping and p...
Keywords:cleaning InSb  lapping  polishing  InSb[111]B  
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