| ZnGeP2多晶合成爆炸原因分析与工艺改进 |
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| 引用本文： | 赵欣,朱世富,程江. ZnGeP2多晶合成爆炸原因分析与工艺改进[J]. 半导体技术, 2011, 0(7): 516-519,553. DOI: 10.3969/j.issn.1003-353x.2011.07.005 |
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| 作者姓名： | 赵欣 朱世富 程江 |
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| 作者单位： | 中国民航飞行学院研究生处,四川,广汉,618307;四川大学材料科学与工程学院,成都,610064 |
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| 基金项目： | 国家自然科学基金(50732005); 四川省科技厅资金(2010ZR0123) |
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| 摘 要： | 分析了磷锗锌(ZnGeP2)多晶合成中的化学反应及其发生爆炸的原因,研究出防止安瓿爆炸的合成新工艺。采用改进的单温区合成法,配合梯度降温冷却技术,有效地避免了ZnGeP2合成过程中的爆炸现象,实现了富余P与合成产物的有效分离。经X射线衍射仪、能量分散光谱仪测试表明:合成产物是高纯单相的ZnGeP2多晶材料。以此为原料,采用垂直布里奇曼法进行ZnGeP2晶体生长,获得了尺寸达Φ20 mm×60 mm外观完整、结晶性好的ZnGeP2单晶体。
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| 关 键 词： | 磷锗锌 多晶合成 安瓿爆炸 垂直布里奇曼法 晶体生长 |
Studies of Explosion Reason in Process of Polycrystalline ZnGeP_2 Synthesis and Improvement of Techniques |
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| Zhao Xin,Zhu Shifu,Cheng Jiang. Studies of Explosion Reason in Process of Polycrystalline ZnGeP_2 Synthesis and Improvement of Techniques[J]. Semiconductor Technology, 2011, 0(7): 516-519,553. DOI: 10.3969/j.issn.1003-353x.2011.07.005 |
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| Authors: | Zhao Xin Zhu Shifu Cheng Jiang |
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| Affiliation: | Zhao Xin1,Zhu Shifu2,Cheng Jiang2(1.Graduate Department,Civil Aviation Flight University of China,Guanghan 618307,China,2.College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China) |
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| Abstract: | The chemical reaction and the reason of explosion in process of polycrystalline ZnGeP2 synthesis were analyzed,and a new technique for prevention of the ampoule explosion was studied out.Explosion phenomena in process of polycrystalline ZnGeP2 synthesis were avoided successfully and the residual phosphorus were also separated from synthetic products availably by a modified single-temperature zone method with gradient descending temperature technique.The synthetic product are high-pure and single-phase ZnGeP... |
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| Keywords: | ZnGeP2 polycrystalline synthesis ampoule explosion vertical Bridgman method(VBM) crystal growth |
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