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硅PIN光电二极管γ电离脉冲辐射的数值模拟
引用本文:王祖军,刘以农,陈伟,唐本奇,黄绍艳,刘敏波,肖志刚,张勇.硅PIN光电二极管γ电离脉冲辐射的数值模拟[J].半导体光电,2009,30(5):681-683.
作者姓名:王祖军  刘以农  陈伟  唐本奇  黄绍艳  刘敏波  肖志刚  张勇
作者单位:清华大学,工程物理系,粒子技术与辐射成像教育部重点实验室,北京,100084;西北核技术研究所,西安,710024;清华大学,工程物理系,粒子技术与辐射成像教育部重点实验室,北京,100084;西北核技术研究所,西安,710024
摘    要:分析了γ电离脉冲辐射诱发硅PIN光电二极管产生光电流的机理.建立了硅PIN光电二极管的器件物理模型以及γ电离脉冲辐射效应模型;运用MEDICI软件,进行了辐射效应数值模拟计算.得出了γ电离脉冲辐射剂量率在10°~109Gy(Si)/s范围内,诱发硅PIN光电二极管光电流变化的初步规律.对比了辐射效应数值模拟结果与国外相关文献给出的辐照实验结果.
Abstract:
The mechanism of photocurrent of Si PIN photodiode induced by γ ionization pulse radiation is analyzed.The device physics and γ ionization pulse radiation models are established to simulate photocurrent of Si PIN photodiode by MEDICI software.The primary regularity of photocurrent of Si PIN photodiode is concluded by γ ionization pulse radiation with the dose rate of 10~0~10~9 Gy (Si)/s.The Simulation results are in agreement with the experimental results given in correlative literatures.

关 键 词:PIN光电二极管  电离脉冲辐射  光电流  数值模拟

Simulation on Photocurrent of Si PIN Photodiode Induced by γ Ionization Pulse Radiation
WANG Zu-jun,LIU Yi-nong,CHEN Wei,TANG Ben-qi,HUANG Shao-yan,LIU Min-bo,XIAO Zhi-gang,ZHANG Yong.Simulation on Photocurrent of Si PIN Photodiode Induced by γ Ionization Pulse Radiation[J].Semiconductor Optoelectronics,2009,30(5):681-683.
Authors:WANG Zu-jun  LIU Yi-nong  CHEN Wei  TANG Ben-qi  HUANG Shao-yan  LIU Min-bo  XIAO Zhi-gang  ZHANG Yong
Abstract:The mechanism of photocurrent of Si PIN photodiode induced by γ ionization pulse radiation is analyzed.The device physics and γ ionization pulse radiation models are established to simulate photocurrent of Si PIN photodiode by MEDICI software.The primary regularity of photocurrent of Si PIN photodiode is concluded by γ ionization pulse radiation with the dose rate of 10~0~10~9 Gy (Si)/s.The Simulation results are in agreement with the experimental results given in correlative literatures.
Keywords:PIN photodiode  ionization pulse radiation  photocurrent  numerical simulation
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