A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement |
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| Authors: | Chen Wensuo Zhang Bo Fang Jian Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A new lateral insulated-gate bipolar transistor with a controlled anode(CA-LIGBT) on silicon-on-insulator (SOI) substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high resistance controlled electron extracting path,CA-LIGBT has a faster turn-off speed and lower forward drop, and the trade-off between off-state and on-state losses is better than that of state-of-the-art 3-D NCA-LIGBT,which we presented earlier.As the simulation results show,the ratios of figure of ... |
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| Keywords: | controlled anode turn-off time forward drop power IC |
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