Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy |
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| Authors: | Wang Lai Hao Zhibiao Han Yanjun Luo Yi Wang Lanxi Chen Xuekang |
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| Affiliation: | 1. Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
2. National Key Laboratory for Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China |
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| Abstract: | AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity,a deterring factor for the detector response time,is found to be strongly related to the grain boundary density in AlGaN epilayers.By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy,the grain-boundary density can be reduced,resulting in an-order-of-magnitude decrease in response time. |
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| Keywords: | metal organic vapor phase epitaxy AlGaN photoconductivity |
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