Multi-wafer 3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor |
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Authors: | Yan Guoguo Sun Guosheng Wu Hailei Wang Lei Zhao Wanshun Liu Xingfang Zeng Yiping Wen Jialiang |
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Affiliation: | 1. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2. China Electric Power Research Institute,Beijing 100192,China |
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Abstract: | We report the latest results of the 3C-SiC layer growth on Si (100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers. 3C-SiC film properties of the intrawafer and the wafer-to-wafer, including crystalline morphologies and electronics, are characterized systematically.Intra-wafer layer thickness and sheet resistance uniformity (σ/mean) of~3.40% and ~5.37% have been achieved in the 3 × 50 mm configuration. Within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 4% and 4.24%, respectively. |
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Keywords: | 3C-SiC vertical multi-wafer HWLPCVD heteroepitaxial growth uniformity |
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