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衬底温度对磁控溅射法制备的ZnO:In薄膜光电性能的影响
引用本文:杨小飞,方亮,彭丽萍,黄秋柳,周科,孔春阳.衬底温度对磁控溅射法制备的ZnO:In薄膜光电性能的影响[J].半导体光电,2009,30(5):711-714.
作者姓名:杨小飞  方亮  彭丽萍  黄秋柳  周科  孔春阳
作者单位:重庆大学应用物理系,重庆,400030;重庆大学应用物理系,重庆,400030;光电技术及系统教育部重点实验室,重庆,400030;重庆大学光电技术及系统教育部重点实验室,重庆,400030
基金项目:重庆大学研究生科技创新项目,重庆大学211工程三期创新人才培养计划建设项目
摘    要:以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO:In)透明导电膜.利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO:In薄膜的结构、光电性能进行表征.结果表明,所有制备的ZnO:In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向.ZnO:In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10~(-3)Ω·cm.制备的薄膜可见光范围内透过率均在85%以上.
Abstract:
Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22~29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%.

关 键 词:铟掺杂氧化锌薄膜  磁控溅射  光电性能  透明导电膜

Effects of Substrate Temperature on Optoelectronic Properties of ZnO:In Film Prepared by RF Magnetron Sputtering
YANG Xiao-fei,FANG Liang,PENG Li-ping,HUANG Qiu-liu,ZHOU Ke,KONG Chun-yang.Effects of Substrate Temperature on Optoelectronic Properties of ZnO:In Film Prepared by RF Magnetron Sputtering[J].Semiconductor Optoelectronics,2009,30(5):711-714.
Authors:YANG Xiao-fei  FANG Liang  PENG Li-ping  HUANG Qiu-liu  ZHOU Ke  KONG Chun-yang
Abstract:Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22~29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%.
Keywords:In-doped ZnO thin films  magnetron sputtering  optical and electrical properties  transparent conductive oxide film
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