| 低损伤ICP刻蚀技术提高GaN LED出光效率 |
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| 引用本文： | 潘岭峰,李琪,伊晓燕,樊中朝,王良臣,王军喜. 低损伤ICP刻蚀技术提高GaN LED出光效率[J]. 微纳电子技术, 2011, 48(5): 333-337. DOI: 10.3969/j.issn.1671-4776.2011.05.011 |
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| 作者姓名： | 潘岭峰 李琪 伊晓燕 樊中朝 王良臣 王军喜 |
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| 作者单位： | 中国科学院,半导体研究所,中国科学院半导体照明研发中心,北京,100083 |
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| 摘 要： | 首先分析了在制作GaN基LED时,采用干法刻蚀技术会对材料的表面和量子阱有源区造成损伤,影响了GaN基LED的内量子效率。针对这个问题,研究实验采用感应耦合等离子反应刻蚀(ICP-RIE)技术,分别选择了氯气/三氯化硼(Cl2/BCl3)气体体系和氯气/氩气(Cl2/Ar)气体体系,通过优化射频功率、ICP功率、气体流量以及相应的真空度,得到了良好的刻蚀端面,对于材料造成的损伤较低,得到更好的I-V特性。实验结果表明,采用低损伤的偏压功率刻蚀后制作的LED器件,出光功率提升一倍以上,同时采用Cl2/Ar气体体系,改善了器件的I-V特性,有效提高了LED的出光效率。
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| 关 键 词： | 发光二极管(LED) 氮化镓(GaN) 干法刻蚀 低损伤 内量子效率 |
Extraction Efficiency of GaN LEDs Improved by Low Damage ICP Etching Technique |
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| Pan Lingfeng,Li Qi,Yi Xiaoyan,Fan Zhongchao,Wang Liangchen,Wang Junxi. Extraction Efficiency of GaN LEDs Improved by Low Damage ICP Etching Technique[J]. Micronanoelectronic Technology, 2011, 48(5): 333-337. DOI: 10.3969/j.issn.1671-4776.2011.05.011 |
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| Authors: | Pan Lingfeng Li Qi Yi Xiaoyan Fan Zhongchao Wang Liangchen Wang Junxi |
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| Affiliation: | Pan Lingfeng,Li Qi,Yi Xiaoyan,Fan Zhongchao,Wang Liangchen,Wang Junxi(Solid State Lighting Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | The dry etching for GaN based multi-quantum well light-emitting diodes(LEDs) could cause damages to the material surface and the active area of the quantum well,and the internal quantum efficiency of GaN-based LEDs was influenced.In order to solve this problem,the systematic experiments were performed by inductively coupled plasma etching(ICP-RIE) technique.The gas ratios of chlorine/boron trichloride(Cl2/BCl3) and chlorine/argon(Cl2/Ar) plasma were chosen respectively and the good etched-facet was obtained... |
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| Keywords: | light-emitting diode(LED) GaN dry etching low damage internal quantum efficiency |
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