| 铝背场对单晶硅太阳电池输出特性的影响 |
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| 引用本文： | 周继承,李斐,陈勇民,赵保星. 铝背场对单晶硅太阳电池输出特性的影响[J]. 半导体光电, 2009, 30(6): 838-841 |
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| 作者姓名： | 周继承 李斐 陈勇民 赵保星 |
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| 作者单位： | 中南大学,物理科学与技术学院,长沙,410083;中南大学,材料科学与工程学院,长沙,410083 |
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| 基金项目： | 湖南省科技重大专项项目，长沙市科技计划重大专项项目 |
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| 摘 要： | 利用PCID软件模拟了n~+/p-p~+结构的单晶硅太阳电池铝背场与硅片厚度对其输出特性的影响.结果表明,有铝背场时太阳电池获得明显的开路电压、短路电流以及光电转换效率的增益;硅片厚度越小,铝背场对其输出特性的影响越大;在有铝背场情况下,硅片厚度为120μm时,可获得最大的光电转换效率.Abstract：The PC1D was usecl to simulate the influence of Al-BSF and wafer thickness on electrical properties of n~+/p-p~+ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency.
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| 关 键 词： | 单晶硅太阳电池 铝背场 硅片厚度 输出特性 |
Influence of AI-BSF on Electrical Properties of Monocrystalline Silicon Solar Cells |
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| ZHOU Ji-cheng,LI Fei,CHEN Yong-min,ZHAO Bao-xing. Influence of AI-BSF on Electrical Properties of Monocrystalline Silicon Solar Cells[J]. Semiconductor Optoelectronics, 2009, 30(6): 838-841 |
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| Authors: | ZHOU Ji-cheng LI Fei CHEN Yong-min ZHAO Bao-xing |
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| Abstract: | The PC1D was usecl to simulate the influence of Al-BSF and wafer thickness on electrical properties of n~+/p-p~+ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency. |
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| Keywords: | monocrystalline silicon solar cell Al back-surface-field wafer thickness electrical properties |
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