Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET

A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time.The gate leakage behaviour of the novel MOSFET structure has been investigated with the help of a compact analytical model and Sentaurus simulation. A fringing gate electric field through the dielectric spacer induces an inversion layer in the non-overlap region to act as an extended S/D(source/drain) region.It is found that an optimal so...