4H-SiC基紫外光电探测器的研究进展

介绍了4H-SiC材料用于高温、低电平紫外光电检测的优点，回顾总结了近年来4H-SiC基紫外光电探测器的研究进展，分析了改善4H-SiC基紫外光电探测器性能参数如降低暗电流、提高光电响应度等可采用的各种技术手段，探讨了4H-SiC基紫外光电探测器的发展趋势。

Research Progress in 4H-SiC-based Ultraviolet Photodetectors

Advances in 4H silicon carbide (4H-SiC) as a potential material for low-level ultraviolet (UV) radiation detection application at high-temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors were reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity were presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.