Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors |
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| Authors: | Nguyen Duy Cuong Dong-Jin Kim Byoung-Don Kang Chang Soo Kim Soon-Gil Yoon |
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| Affiliation: | aDepartment of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 305-764 Daejeon, Republic of Korea;bKMC Technology, Panam Techno-Town 103, Panam-dong 239-2, Dong-gu, 300-130 Daejeon, Republic of Korea;cKorea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea |
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| Abstract: | We report about developing high resistivity thin film resistors using titanium oxy-nitride. Titanium nitride films of different thicknesses ranging from 50 to 300 nm were deposited on SiO2/Si substrates using the reactive magnetron sputtering method. After deposition, these films were annealed in the air ambient. The structural and electrical properties of the films were examined as a function of annealing temperature. The samples with various thicknesses show TiN(1 1 1) phase. The sheet resistance increases from 150 up to 420 Ω/□ when the film thickness decreases from 300 to 50 nm. Temperature coefficience of resistance (TCR) of the films significantly decreased with decreasing the film thickness. The TCR of 50-nm thick film is quite low, about 49 ppm/K. |
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