| Abstract: | A new natural gate length scale for MOSFET's is presented using Variational Method. Comparison of the short channel effects is conducted for the uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET. And the results are verified by the 2D numerical simulation. Taken all the 2\|D effects on front gate dielectric, back gate dielectric and silicon film into account, the data validity of electrical equivalent oxide thickness is investigated by this model, as shows that it is valid only when the gate dielectric constant is relatively small. |
