Stability of quasi-ballistic MESFETs with various buffer layer structures under irradiation with neutrons possessing different energy spectra

The effect of irradiation with neutrons possessing an average energy of 1.1 and 14 MeV on the characteristics of quasi-ballistic metal-Schottky-gate field-effect transistors (MESFETs) with various structures of the buffer layer has been studied. In the series of MESFETs with buffers based on a GaAs homostructure, AlGaAs-based heterostructure, and AlAs/GaAs superlattice, the radiation stability increases (on every passage, by a factor of 1.2–5) due to the compression of electron trajectories in the conducting channel and the gettering of radiation defects at a heteroboundary of the buffer layer.