合成硼碳氮体系薄膜的XPS研究

采用Ｘ射线光电子谱（ＸＰＳ）分析３００～５００℃等离子体源离子渗氮硼和碳化硼薄膜合成的氮化硼和硼碳氮薄膜。利用合成薄膜成分可控的特点，研究Ｂ、Ｃ、Ｎ对薄膜的ＸＰＳ影响。结果表明，ＸＰＳ分析合成氮化硼薄膜能够确定其化学组成，但不能确定ｓｐ＾２和ｓｐ＾３型键合结构特性；ＸＰＳ分析硼碳氮薄膜能够确定其成分和结构特性。在较高的工艺温度下，等离子体源离子渗氮合成的硼硕氮薄膜具有ｓｐ＾２和ｓｐ＾３型复合的键合

XPS Studies of Synthesized B C N Films by Plasma Source Ion Nitriding

The synthesized boron nitride and boron carbon nitrogen films by plasma source ion nitriding were analyzed by X ray photoelectron spectroscopy(XPS) The effects of boron, carbon and nitrogen elements in the films on the XPS results were studied making use of the film characteristics with the controllable composition The XPS revealed that the formation of boron nitride films was confirmed but the sp 2 and sp 3 plain microdomain structures were difficult distinguished, and the formation and bonding structures of boron carbon nitrogen films could be determined The synthesized boron carbon nitrogen films possessed a mixing structure of sp 2 and sp 3 plain microdomains in the processes