Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al/sub x/Ga/sub 1-x/N/GaN MODFETs |
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Authors: | Valizadeh P Pavlidis D |
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Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA; |
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Abstract: | Variations of the low-frequency noise (LFN), power, and dc characteristics of a variety of SiN/sub x/ passivated AlGaN/GaN MODFETs with different values of Al mole-fraction, gate length, and gate drain spacing upon RF stress are investigated. It is experimentally evidenced that the variation of Al mole-fraction (x) of the barrier Al/sub x/Ga/sub 1-x/N layer from 0.2 to 0.4, has no considerable impact on the drain and gate low-frequency noise current characteristics. The most noticeable variation on the device characteristics upon long-term RF stressing has been on the pinch-off voltage. Although no material degradation by increasing the Al mole-fraction has been evidenced through the low-frequency noise data, it is observed that the variation of pinch-off voltage upon RF stressing becomes more important as the Al mole-fraction increases. |
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