首页 | 本学科首页   官方微博 | 高级检索  
     

硅/硅直接键合制备p^+/n^—和n^—/n^—结构
引用本文:林长贵,崔吾元.硅/硅直接键合制备p^+/n^—和n^—/n^—结构[J].微电子学,1992,22(5):39-41.
作者姓名:林长贵  崔吾元
作者单位:西安交通大学电子工程系,西安交通大学电子工程系,西安交通大学电子工程系 陕西西安 710049,陕西西安 710049,陕西西安 710049
摘    要:本文采用Si/Si直接键合制备p~+/n~-、n~-/n~-结构的工艺原理及方法。通过实验,摸索出了一种有效的表面清洗-高温处理Si/Si键合工艺;采用该工艺制出了p~+/n~-、n~-/n~-样片;对键合的微观结构、键合强度、杂质分布及电接触特性进行了检测。

关 键 词:键合  硅膜  欧姆接触  

Preparation of p~+/n~- and n~- /n~- Silicon Wafers by Si/Si Direct Bonding
Lin Changgui,Cui Wuyuan and Luo Jinsheng Deft. Electronic Engineering,Xi'an Jiaotong University,Xi'an',Shaanxi.Preparation of p~+/n~- and n~- /n~- Silicon Wafers by Si/Si Direct Bonding[J].Microelectronics,1992,22(5):39-41.
Authors:Lin Changgui  Cui Wuyuan and Luo Jinsheng Deft Electronic Engineering  Xi'an Jiaotong University    Xi'an'  Shaanxi
Affiliation:Lin Changgui,Cui Wuyuan and Luo Jinsheng Deft. Electronic Engineering,Xi'an Jiaotong University,710049,Xi'an',Shaanxi
Abstract:The technique for preparation of p+/n- Si warers by Si/Si direct bonding is described in the paper. An effective process for silicon-to-silicon bonding combining prebonding surface cleaning with thermal treatment bas been developed through our experiments. Sample wafers with p+/n- and n-/n- structures were made using this process. The mi-crostructure of the bonding interface,the bonding strength,the profile of impurities and the electric contact characteristics were measured and results are presented.
Keywords:Bonding  Silicon film  Ohmic-contact
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号