Thermal properties of semiconductor zinc oxide nanostructures |
| |
| Authors: | Kh. T. Igamberdiev Sh. U. Yuldashev S. S. Kurbanov T. W. Kang P. K. Khabibullaev Sh. M. Rakhimova V. O. Pelenovich A. G. Shashkov |
| |
| Affiliation: | 1.Quantum-functional Semiconductor Research Center,Dongguk University,Seoul,South Korea;2.Department of thermal physics,National Academy of Sciences of Uzbekistan,Tashkent,Uzbekistan;3.A. V. Luikov Heat and Mass Transfer Institute,National Academy of Sciences of Belarus,Minsk,Belarus |
| |
| Abstract: | A combination of two methods — laser modulation and 3ω — has been used to determine the heat capacity, heat conductivity, and heat diffusivity of zinc oxide nanostructures. A significant difference between the thermal parameters of zinc oxide nanostructures grown by different technological methods has been revealed. It has been shown that the relatively low heat conductivity and heat diffusivity values of oxide zinc nanostructures are due to both the internal defects and the contact resistance between the film and its base — the substrate. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
