Pulsed Laser Processing of Carbon and Silicon Clusters and Thin Films

Abstract

Several new processes have been developed for the preparation of fullerenes and thin films by using a pulsed excimer laser. The irradiation of a pulsed KrF excimer laser beam onto a C₆₀ powder target produced single phase C₆₀ thin films when the laser energy fluence was in the range between 40 and 50mJ/cm². By atomic force microscopy, the laser-deposited C₆₀ thin film was verified to have a surface far smoother that the surfaces of films produced by the conventional evaporation method. The stainless steel rods coated with this film exhibited an excellent tribological property. Cluster formation from SiC and other carbides MC_n(M=Ti,W,B) was investigated by laser desorption time-of-flight mass spectrometry. No clear indication was observed for the production of such clusters as (SiC)₆₀ and (M_xC_60-x) from the sintered targets directly as well as from the films laser deposited from the targets. However, C₆₀ and C₇₀ were found to exists in the laser-deposited films, indicating a new applicability of pulsed laser processing for segregative cluster synthesis from solid solution. Preliminiary results on thin film deposition via pulsed ablation of (Ba,Na)_xSi₄₆ clathrate were also presented.