Germanium‐Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices |
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Authors: | Ziwen Wang Zhongying Xue Miao Zhang Yongqiang Wang Xiaoming Xie Paul K Chu Peng Zhou Zengfeng Di Xi Wang |
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Affiliation: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China;2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, USA;3. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong, China;4. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China |
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Abstract: | Direct growth of graphene on dielectric substrates is a prerequisite to the development of graphene‐based electronic and optoelectronic devices. However, the current graphene synthesis methods on dielectric substrates always involve a metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. Herein, a semiconducting, germanium (Ge)‐assisted, chemical vapor deposition approach is proposed to produce monolayer graphene directly on arbitrary dielectric substrates. By the prepatterning of a catalytic Ge layer, the graphene with desired pattern can be achieved conveniently and readily. Due to the catalysis of Ge, monolayer graphene is able to form on Ge‐covered dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. Optimization of the process parameters leads to complete sublimation of the catalytic Ge layer during or immediately after formation of the monolayer graphene, enabling direct deposition of large‐area and continuous graphene on dielectric substrates. The large‐area, highly conductive graphene synthesized on a transparent dielectric substrate using the proposed approach has exhibited a wide range of applications, including in both defogger and thermochromic displays, as already successfully demonstrated here. |
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Keywords: | chemical vapor deposition dielectric substrates Ge‐assisted growth graphene |
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