Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering |
| |
Authors: | A Sivasankar Reddy P Sreedhara Reddy S Uthanna G Mohan Rao |
| |
Affiliation: | (1) Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India;(2) Department of Instrumentation, Indian Institute of Science, Bangalore, 560 012, India |
| |
Abstract: | Thin films of copper aluminum oxide (CuAlO2) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial
pressures in the range 1 × 10−4–3 × 10−3 mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering
target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied.
p-Type CuAlO2 films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm2 V−1 s−1 and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10−4 mbar. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|