| HSQ用于电子束曝光的性能分析 |
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| 引用本文： | 赵珉,陈宝钦,刘明,谢常青,朱效立. HSQ用于电子束曝光的性能分析[J]. 微细加工技术, 2008, 0(4) |
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| 作者姓名： | 赵珉 陈宝钦 刘明 谢常青 朱效立 |
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| 作者单位： | 中国科学院微电子研究所,纳米加工与新器件集成技术实验室,北京,100029 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 作为一种非化学放大的无机负性电子束光刺抗蚀剂,HSQ(hydrogen silsesquioxane)具有极高的分辨率(约5 nm),由于灵敏度较低,限制了其在微纳米加工方面的应用.从化学结构变化的角度分析了HSQ在电子束曝光中的性能,通过实验验证了其灵敏度及对比度受前烘温度及显影液浓度的影响较大,并且其在电子束曝光中的邻近效应也可以通过改变这两个条件而得到一定的抑制.根据所得优化工艺条件,在450 nm胶层上,制作出100 nm等间距光栅结构胶层图形,且其侧壁陡直性良好.
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| 关 键 词： | 电子束曝光技术 抗蚀剂工艺 邻近效应 |
Analysis of Performance of HSQ in Electron Beam Lithography |
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| ZHAO Min,CHEN Bao-qin,LIU Ming,XIE Chang-qing,ZHU Xiao-li. Analysis of Performance of HSQ in Electron Beam Lithography[J]. Microfabrication Technology, 2008, 0(4) |
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| Authors: | ZHAO Min CHEN Bao-qin LIU Ming XIE Chang-qing ZHU Xiao-li |
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| Affiliation: | ZHAO Min,CHEN Bao-qin,LIU Ming,XIE Chang-qing,ZHU Xiao-li(Key Laboratory of Nano-fabrication , Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | Hydrogen silsesquioxane(HSQ) is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm.It is a kind of promising resist used in fabrication of nanostructures such as transmission grating(TG),dots array,and chiral structures.But the poor sensitivity limits the extensive application of HSQ.From the viewpoint of chemical structure,the property of HSQ in electron beam lithography has been proposed and experiments have also been presented with the variet... |
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| Keywords: | HSQ(hydrogen lsesquioxane) |
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