Contact etch process optimization for RF process wafer edge yield improvement |
| |
Authors: | Zhangli Liu Bingkui He Fei Meng Qiang Bao Yuhong Sun Shaojun Sun Guangwei Zhou Xiuliang Cao Haiwei Xin |
| |
Affiliation: | Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China |
| |
Abstract: | Radio-frequency (RF) process products suffer from a wafer edge low yield issue, which is induced by contact opening. A failure mechanism has been proposed that is based on the characteristics of a wafer edge film stack. The large step height at the wafer’s edge leads to worse planarization for the sparse poly-pattern region during the inter-layer dielectric (ILD) chemical mechanical polishing (CMP) process. A thicker bottom anti-reflect coating (BARC) layer was introduced for a sparse poly-pattern at the wafer edge region. The contact open issue was solved by increasing the break through (BT) time to get a large enough window. Well profile and resistance uniformity were obtained by contact etch recipe optimization. |
| |
Keywords: | bottom anti-reflect coating break through wafer edge planarization |
本文献已被 万方数据 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |