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A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States |
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| Authors: | Yeyu Fang R K Dumas T N Anh Nguyen S M Mohseni S Chung C W Miller Johan Åkerman |
| Affiliation: | 1. Department of Physics, University of Gothenburg, 412 96 Gothenburg, Sweden E‐mail: fangyeyu84@gmail.com;2. Materials Physics, School of Information and Communication Technology, KTH ‐ Royal Institute of Technology, Electrum 229, 164 40 Stockholm‐Kista, Sweden;3. Department of Physics, University of South Florida, Tampa, FL 33620, USA |
| Abstract: | A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field‐independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first‐order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field‐dependent population of up and down domains in the free layer. |
| Keywords: | multilevel memory giant magnetoresistance magnetic domains spintronic memristor graded anisotropy |