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Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning
Authors:Anna Marzegalli  Fabio Isa  Heiko Groiss  Elisabeth Müller  Claudiu V. Falub  Alfonso G. Taboada  Philippe Niedermann  Giovanni Isella  Friedrich Schäffler  Francesco Montalenti  Hans von Känel  Leo Miglio
Affiliation:1. L‐NESS and Dept. of Materials Science, Università degli Studi di Milano‐Bicocca, via Cozzi 53, I‐20125, Milano, Italy;2. L‐NESS and Dept. of Physics, Politecnico di Milano, via Anzani 42, I‐22100 Como, Italy;3. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz Altenbergerstrasse 69, A‐4040 Linz, Austria;4. Electron Microscopy, ETH Zurich, Wolfgang Pauli Str. 16, CH‐8093 Zürich, Switzerland;5. Laboratory for Solid State Physics, ETH Zurich, Schafmattstr. 16, CH‐8093 Zürich, Switzerland;6. Centre Suisse d'Electronique et Microtechnique, Jaquet‐Droz 1, CH‐2002 Neuchatel, Switzerland
Abstract:
Keywords:semiconductors  heteroepitaxy  dislocations  Ge  patterning
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