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Field‐Effect Transistors: Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)
Authors:Jeong Gon Son  Myungwoo Son  Kyeong‐Joo Moon  Byoung Hun Lee  Jae‐Min Myoung  Michael S Strano  Moon‐Ho Ham  Caroline A Ross
Affiliation:1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA);2. Photo‐Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul, 136‐791 (South Korea);3. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500‐712 (South Korea);4. Department of Materials Science and Engineering, Yonsei University, Seoul, 120‐749 (South Korea);5. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
Abstract:
Keywords:graphene  nanoribbon  block copolymer  transistor  nanofabrication
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