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Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)
Authors:Gun Hwan Kim  Jong Ho Lee  Youngbae Ahn  Woojin Jeon  Seul Ji Song  Jun Yeong Seok  Jung Ho Yoon  Kyung Jean Yoon  Tae Joo Park  Cheol Seong Hwang
Affiliation:1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter‐university, Semiconductor Research Center, Seoul National University, Seoul 151‐744, Korea;2. Department of Materials Engineering, Hanyang University, Ansan, 426‐791, Korea
Abstract:
Keywords:crossbar arrays  unipolar resistive switching  Schottky‐type diodes
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