Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application |
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Authors: | Jea‐Shik Shin Insang Song Chul‐Soo Kim Moon‐Chul Lee Sang Uk Son Duck‐Hwan Kim Ho‐Soo Park Sungwoo Hwang Jae‐Sung Rieh |
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Affiliation: | 1. Jea‐Shik Shin (phone: +82 31 280 9495, oh.shin@samsung.com) is with the Samsung Advanced Institute of Technology (SAIT) and with the School of Electrical Engineering, Korea University, Seoul, Rep. of Korea.;2. Insang Song (supersong@samsung.com), Chul‐Soo Kim (chuls.kim@samsung.com), Moon‐Chul Lee (mch.lee@samsung.com), Sang Uk Son (su.son@samsung.com), Duck‐ Hwan Kim (the‐kwan.kim@samsung.com), Ho‐Soo Park (hlake.park@samsung.com), and Sungwoo Hwang (swnano.hwang@samsung.com) are with the Samsung Advanced Institute of Technology (SAIT), Yongin, Rep. of Korea.;3. Jae–Sung Rieh (jsrieh@korea.ac.kr) is with the School of Electrical Engineering, Korea University, Seoul, Rep. of Korea. |
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Abstract: | A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long‐Term Evolution band‐7 duplexer should be designed to prevent the co‐existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice‐ and ladder‐type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance‐to‐unbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as 2.0 mm × 1.6 mm. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to ?16.9 ppm/°C. |
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Keywords: | Bulk acoustic wave BAW film bulk acoustic wave resonator FBAR RF duplexer RF resonator |
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