p‐Type Beta‐Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties |
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| Authors: | Mei Feng Lin‐Bao Luo Biao Nie Shu‐Hong Yu |
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| Affiliation: | 1. Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China;2. Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, China |
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| Abstract: | β‐AgVO3, as a stable phase and a typical silver vanadium oxide, has performed special ionic and electrical properties. The construction of nanoelectronic devices based on ultralong β‐AgVO3 nanoribbons (NRs) is reported, including nano‐field‐effect transistor (nano‐FET) and nano‐Schottky barrier diode (nano‐SBD). Owing to the specific channel structure and ion conductivity, the nano‐FET exhibits typical p‐type semiconductor characteristics and the nano‐SBD with Al contacts performs a prominent rectifying behavior with an on/off ratio of up to 103. Besides, tunable electrical transport properties can be achieved by tailoring the material properties, and it is demonstrated that the bridging NR numbers and diameters have a positive effect on electrical transport properties, while a complex variation trend is observed in the case of surface modification by photo‐irradiation. Electron spin resonance (ESR) spectrum further illuminates that the induced vacancies play an important role on the electrical transport properties of β‐AgVO3 nanoribbons. Easy access to the ultralong β‐AgVO3 NRs makes them a promising candidate for potential applications in nanoelectronic devices. |
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| Keywords: | field‐effect transistors nano‐Schottky barrier diodes barrier height rectifying behavior surface engineering β ‐AgVO3 |
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