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A Compact C‐Band 50 W AlGaN/GaN High‐Power MMIC Amplifier for Radar Applications |
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| Authors: | Jin‐Cheol Jeong Dong‐Pil Jang Byoung‐Gon Han In‐Bok Yom |
| Affiliation: | 1. Jin‐Cheol Jeong (phone: +82 42 860 6422, jcjung@etri.re.kr), Dong‐Pil Jang (dpjang@etri.re.kr), and In‐Bok Yom (ibyom@etri.re.kr) are with the Broadcasting & Telecommunications Media Research Laboratory, ETRI, Daejeon, Rep. of Korea.;2. Byoung‐Gon Han (bghan@rfhic.com) is with the Radar Group, RFHIC Corporation, Suwon, Rep. of Korea. |
| Abstract: | A C‐band 50 W high‐power microwave monolithic integrated circuit amplifier for use in a phased‐array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two‐stage amplifier can achieve a saturated output power of 50 W with higher than 35% power‐added efficiency and 22 dB small‐signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated. |
| Keywords: | C‐band microwave monolithic integrated circuit high power amplifier GaN saturated output power power density |