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25th Anniversary Article: Key Points for High‐Mobility Organic Field‐Effect Transistors
Authors:Huanli Dong  Xiaolong Fu  Jie Liu  Zongrui Wang  Wenping Hu
Affiliation:1. Beijing National laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, , Beijing, 100190 China;2. Department of Chemistry, Capital Normal University, , Beijing, 100037 China;3. University of Chinese Academy of Sciences, , Beijing, 100039 China
Abstract:Remarkable progress has been made in developing high performance organic field‐effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.
Keywords:organic field‐effect transistor  molecular engineering  process engineering  interface engineering  high mobility
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