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A Versatile Light‐Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3
Authors:Ashok Bera  Haiyang Peng  James Lourembam  Youde Shen  Xiao Wei Sun  T. Wu
Affiliation:1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;2. School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore;3. South University of Science and Technology, 1088 Xue‐Yuan Road, Shenzhen, Guangdong 518055, China;4. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955‐6900, Saudi Arabia
Abstract:Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb‐doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low‐temperature solution‐based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light‐switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties.
Keywords:ZnO  SrTiO3  resistive switching  persistent photoconductivity  electron tunneling
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