Low-temperature anodic bonding of silicon to silicon wafers by means of intermediate glass layers |
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Authors: | A Gerlach D Maas D Seidel H Bartuch S Schundau K Kaschlik |
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Affiliation: | (1) Forschungszentrum Karlsruhe, Institut für Mikrostrukturtechnik, Postfach 3640, D-76021 Karlsruhe, Germany, DE;(2) Institut für Fügetechnik und Werkstoffprüfung GmbH, Otto-Schott-Str. 13, D-07745 Jena, Germany, DE |
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Abstract: | Silicon wafers have been anodically bonded to sputtered lithium borosilicate glass layers (Itb 1060) at temperatures as low
as 150–180 °C and to sputtered Corning 7740 glass layers at 400 °C. Dependent on the thickness of the glass layer and the
sputtering rate, the sputtered glass layers incorporate compressive stresses which cause the wafer to bow. As a result of
this bowing, no anodic bond can be established especially along the edges of the silicon wafer. Successful anodic bonding
not only requires plane surfaces, but also is determined very much by the alkali concentration in the glass layer. The concentration
of alkali ions as measured by EDX and SNMS depends on both the sputtering rate and the oxygen fraction in the argon process
gas. In Itb 1060 layers produced at a sputtering rate of 0.2 nm/s, and in Corning 7740 layers produced at sputtering rates
of 0.03 and 0.5 nm/s, respectively, the concentration of alkali ions in the glass layers was sufficiently high, at oxygen
partial pressures below 10-4 Pa, to achieve anodic bonding. High-frequency ultrasonic microanalysis allowed the bonding area to be examined non-destructively.
Tensile strengths between 4 and 14 MPa were measured in subsequent destructive tensile tests of single-bonded specimens. |
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