High-Temperature Active Oxidation of Chemically Vapor-Deposited Silicon Carbide in CO─CO2 Atmosphere |
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| Authors: | Takayuki Narushima Takashi Goto Yoshio Yokoyama Yasutaka Iguchi Toshio Hirai |
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| Affiliation: | Department of Metallurgy, Tohoku University, Sendai 980, Japan |
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| Abstract: | Active oxidation behavior of CVD-SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, P CO2/ P CO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of P CO2/ P CO, ( P CO2/ P CO )*, In a P CO2/ P CO region lower than the ( P CO2/ P CO)* a carbon layer was formed on the SiC surface. In a P CO2/ P CO region higher than the ( P CO2/ P CO)*, silica particles or a porous silica layer was observed on the SiC surface. |
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