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Large-Scale Synthesis of Strain-Tunable Semiconducting Antimonene on Copper Oxide
Authors:Tianchao Niu  Qingling Meng  Dechun Zhou  Nan Si  Shuwei Zhai  Xiamin Hao  Miao Zhou  Harald Fuchs
Affiliation:1. Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094 China;2. School of Physics, Beihang University, Beijing, 100191 China;3. Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing, 210094 China

Physikalisches Institut, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, Münster, 48149 Germany

Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität Münster, Heisenbergstrasse 11, Münster, 48149 Germany

Abstract:Controlled synthesis of 2D structures on nonmetallic substrate is challenging, yet an attractive approach for the integration of 2D systems into current semiconductor technologies. Herein, the direct synthesis of high-quality 2D antimony, or antimonene, on dielectric copper oxide substrate by molecular beam epitaxy is reported. Delicate scanning tunneling microscopy imaging on the evolution intermediates reveals a segregation growth process on Cu3O2/Cu(111), from ordered dimer chains to packed dot arrays, and finally to monolayer antimonene. First-principles calculations demonstrate the strain-modulated band structures in antimonene, which interacts weakly with the oxide surface so that its semiconducting nature is preserved, in perfect agreement with spectroscopic measurements. This work paves the way for large-scale growth and processing of antimonene for practical implementation.
Keywords:antimonene  density functional theory  metal oxide  molecular beam epitaxy  scanning tunneling microscopy
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