Magneto-Memristive Switching in a 2D Layer Antiferromagnet |
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| Authors: | Hyun Ho Kim Shengwei Jiang Bowen Yang Shazhou Zhong Shangjie Tian Chenghe Li Hechang Lei Jie Shan Kin Fai Mak Adam W. Tsen |
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| Affiliation: | 1. Institute for Quantum Computing, Department of Chemistry, and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, N2L 3G1 Canada;2. School of Applied and Engineering Physics, Department of Physics and Kavli Institute, for Nanoscale Science, Cornell University, Ithaca, NY, 14853 USA;3. Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872 China |
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| Abstract: | Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI3, a natural layer antiferromagnet, is reported here. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field and electric-field switching of magnetization even in multilayer samples. |
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| Keywords: | 2D magnetism chromium triiodide memristive switching van der Waals heterostructures |
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