Relieving the Photosensitivity of Organic Field-Effect Transistors |
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| Authors: | Jie Liu Longfeng Jiang Jia Shi Chunlei Li Yanjun Shi Jiahui Tan Haiyang Li Hui Jiang Yuanyuan Hu Xinfeng Liu Junsheng Yu Zhongming Wei Lang Jiang Wenping Hu |
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| Affiliation: | 1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 China;2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China;3. Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190 China;4. Guangzhou China Ray Optoelectronic Materials Co., Ltd., Guangzhou, 510663 China;5. School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798 Singapore;6. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082 China;7. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China;8. Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072 China |
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| Abstract: | It is generally believed that the photoresponse behavior of organic field-effect transistors (OFETs) reflects the intrinsic property of organic semiconductors. However, this photoresponse hinders the application of OFETs in transparent displays as driven circuits due to the current instability resulting from the threshold voltage shift under light illumination. It is necessary to relieve the photosensitivity of OFETs to keep the devices stable. 2,6-diphenyl anthracene thin-film and single-crystal OFETs are fabricated on different substrates, and it is found that the degree of molecular order in the conducting channels and the defects at the dielectric/semiconductor interface play important roles in determining the phototransistor performance. When highly ordered single-crystal OFETs are fabricated on polymeric substrates with low defects, the photosensitivity (P) decreases by more than 105 times and the threshold voltage shift (ΔVT) is almost eliminated compared with the corresponding thin-film OFETs. This phenomenon is further verified by using another three organic semiconductors for similar characterizations. The decreased P and ΔVT of OFETs ensure a good current stability for OFETs to drive organic light-emitting diodes efficiently, which is essential to the application of OFETs in flexible and transparent displays. |
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| Keywords: | defects organic field-effect transistors photosensitivity threshold voltage shift |
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