Relaxation of light-induced metastable state of boron-doped p-type a-Si:H |
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Authors: | A G Kazanskii E V Larina |
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Affiliation: | (1) M. V. Lomonosov Moscow State University, 119899 Moscow, Russia |
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Abstract: | Relaxation of the dark conductivity of boron-doped a-Si: H films after illumination in the temperature range 360–470 K has been studied. It is shown that the measuring conductivity
relaxation after illumination under different conditions (illumination time and temperature) makes it possible to separately
investigate relaxation of the concentration of light-induced metastable defects of the “dangling-bonds” type and relaxation
of the concentration of metastable states associated with impurity atoms. In both cases the relaxation obeys a stretched-exponential
law. The main parameters of both relaxations and their temperature dependence have been measured. The experimental results
can be explained within the framework of a model of the annealing activation energy distribution for light-induced metastable
states.
Fiz. Tekh. Poluprovodn. 32, 117–120 (January 1998) |
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