Department of Metallurgical Engineering and Materials Science, University of Kentucky, Lexington, Ky. 40506, U.S.A.
Abstract:
Conductivity measurements reported previously for thin films of poly(divinylbenzene) have been interpreted in terms of a quantum mechanical tunneling conductivity mechanism. Quantum mechanical tunneling of carriers through thin spots (5–45 Å) in films having dielectric thickness of a few hundred Å is more consistent with the reported current-voltage-temperature characteristics than the previously suggested Richardson-Schottky mechanism.