N-doped ZnO based fast response ultraviolet photoconductive detector |
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Authors: | SS Shinde CH Bhosale KY Rajpure |
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Affiliation: | Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, India |
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Abstract: | We report a study on the fabrication and characterization of ultraviolet photodetectors based on N-doped ZnO films. Highly oriented N-doped ZnO films with 10 at.% N doping are deposited using spray pyrolysis technique onto glass substrates. The photoconductive UV detector based on N-doped ZnO thin films, having a metal–semiconductor–metal (MSM) configuration are fabricated by using Al as a contact metal. I–V characteristic under dark and UV illumination, spectral and transient response of ZnO and N-doped ZnO photodetector are studied. The photocurrent increases linearly with incident power density by more than two orders of magnitude. The photoresponsivity (580 A/W at 365 nm with 5 V bias, light power density 2 μW/cm2) is much higher in the ultraviolet region than in the visible. |
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