Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

We have developed an advanced inversion charge model for both n-type and p-type symmetrical Double-Gate MOSFETs where quantum mechanical effects (QMEs) have been included. By doing so, the role of different crystallographic orientations was successfully taken into account. Self-consistent Poisson and Schrödinger simulators were used to check the accuracy of the model presented. As a starting point, a classical inversion charge centroid model was considered. Afterwards, an inversion charge model was developed including QMEs by means of a corrected oxide capacitance. The validity of the model was checked for the three common wafer orientations (1 0 0), (1 1 0) and (1 1 1) and for devices with different silicon layer (t_Si) and oxide (t_ox) thicknesses. As it will be shown, the model reproduces correctly the simulation data both in the subthreshold and in the strong inversion operation regime.