Silicon lifetime enhancement by SiNx:H anti-reflective coating deposed by PECVD using SiH4 and N2 reactive gas |
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| Authors: | Rabaa Bousbih Wissem Dimassi Ikbel Haddadi Sonia Ben Slema Paolo Rava Hatem Ezzaouia |
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| Affiliation: | 1. Electrodes and Barriers Group, TNO/Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands;2. Philips Research Laboratories, High Tech Campus 29, 5656 AE Eindhoven, The Netherlands;3. Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein, The Netherlands;4. Plasma and Materials Processing Group, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands |
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| Abstract: | Hydrogenated films of silicon nitride SiNx:H are largely used as antireflective coating as well as passivation layer for industrial crystalline and multicrystalline silicon solar cells. In this work, we present a low cost plasma enhanced chemical vapor deposition (PECVD) of this thin layer by using SiH4 and N2 as a reactive gases. A study was carried out on the variation effect of the ratio silane (SiH4) to nitrogen (N2) and time deposition on chemical composition, morphologies, reflectivity and carrier lifetime. The thickness was varied, in order to obtain a homogeneous antireflective layer. The Fourier transmission infrared spectroscopy (FTIR) shows the existence of Si–N and Si–H bonds. The morphologies of the sample were studied by Atomic Force Microscopy (AFM). The resulting surface of the SiNx:H shows low-reflectivity less than 5% in wavelength range 400–1200 nm. As a result, an improvement in minority carrier lifetime has been achieved to about 15 μs. |
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