Bifacial transparent solid-state dye-sensitized solar cell with sputtered indium-tin-oxide counter electrode |
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| Authors: | Yi-Fang Chiang Cheng-Hung Tsai Peter Chen Tzung-Fang Guo |
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| Affiliation: | 1. Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan, ROC;2. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC;3. Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC;1. Dipartimento di Chimica, Università di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino (FI), Italy;2. Istituto di Chimica dei Composti Organometallici (ICCOM-CNR), via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy;3. Dipartimento di Scienze della Terra, Università di Firenze, via La Pira 4, 50121 Firenze, Italy;1. Departamento de Química Fundamental, Universidade Federal de Pernambuco, Recife, PE 50740-560, Brazil;2. Pople Computational Chemistry Laboratory, Departamento de Química, Universidade Federal de Sergipe, São Cristóvão, SE 49100-000, Brazil;1. Department of Solar & Energy Engineering, Cheongju University, Cheongju 363-764, Republic of Korea;2. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan;3. Advanced R&D Center, Mitsubishi Electric Corporation, Hyogo 661-8661, Japan;4. Advanced Research Lab., Tokyo City University, 8-5-1, Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;1. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, PR China;2. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, PR China;3. Key Laboratory of Optical Information Science and Technology of Ministry of Education, Tianjin 300071, PR China;4. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China |
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| Abstract: | In this study, we report a solid state dye-sensitized solar cell (SSDSC) made with a transparent ITO film as a counter electrode using the sputtering technology. For the first time, a bifacial transparent SSDSC is realized and irradiated from FTO and ITO side. The SSDSCs give short circuit photocurrent density (Jsc) of 4.16 mA cm?2, open circuit voltage (Voc) of 0.74 V, and fill factor (FF) of 0.64, corresponding to the photoelectric conversion efficiency of 1.96% from FTO side illumination (AM 1.5G, 100 mW cm?2). Moreover, it is found that Jsc of SSDSCs (2.85 mA cm?2) when irradiated from ITO side is less than that from FTO side. This result is because of the cut-off of incident photons in the blue region by the ITO film and the light screening effect by the hole transport material (HTM) absorption. Our results demonstrate the possibility of production scalable sputtering process for SSDSCs electrodes fabrication and pave the avenue for tandem design application which requires a transparent intermediate layer for interconnection. |
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