Dynamic switching characteristic dependence on sidewall angle for phase change memory |
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| Authors: | X.M. Long X.S. Miao J.J. Sun X.M. Cheng H. Tong Y. Li D.H. Yang J.D. Huang C. Liu |
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| Affiliation: | 1. Dept. of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;2. Wuhan Nation Laboratory Optoelectronics, Wuhan 430074, China;3. Wuhan Xinxin Semiconductor Manufacturing Corp., Wuhan 430074, China |
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| Abstract: | In this paper, the volume-minimized model of phase change memory (PCM) cell with Ge2Sb2Te5 (GST) material has been established to study the dynamic switching (set-to-reset) characteristic dependence on the sidewall angle. Joule heating volume, threshold current, dynamic resistance and phase transition rate of PCM cells by current pulse are all calculated. The results show that the threshold current increases with decreasing the sidewall angle and is significantly impacted by the feature size and aspect ratio. The PCM cell of 90° sidewall angle exhibits the smallest Joule heating volume, the highest RESET resistance and the fastest phase transition property. |
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