Effect of the initial doping level on changes in the free-carrier concentration in porous silicon during ammonia adsorption |
| |
Authors: | A V Pavlikov L A Osminkina I A Belogorokhov E A Konstantinova A I Efimova V Yu Timoshenko P K Kashkarov |
| |
Affiliation: | (1) Faculty of Physics, Moscow State University, Vorob’evy gory, Moscow, 119992, Russia |
| |
Abstract: | Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 1018 cm?3. In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|